Invention Grant
- Patent Title: Double patterning method
- Patent Title (中): 双重图案化方法
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Application No.: US13155754Application Date: 2011-06-08
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Publication No.: US08178286B2Publication Date: 2012-05-15
- Inventor: Michael Chan
- Applicant: Michael Chan
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group, PLLC
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern comprising a first grid, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, where the second photoresist pattern is a second grid which overlaps the first grid to form a photoresist web, and etching the underlying layer using the photoresist web as a mask.
Public/Granted literature
- US20110236833A1 Double Patterning Method Public/Granted day:2011-09-29
Information query
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