Invention Grant
- Patent Title: Programmable resistive RAM and manufacturing method
- Patent Title (中): 可编程电阻RAM及制造方法
-
Application No.: US12777640Application Date: 2010-05-11
-
Publication No.: US08178388B2Publication Date: 2012-05-15
- Inventor: ChiaHua Ho
- Applicant: ChiaHua Ho
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Kenta Suzue Haynes Beffel & Wolfeld LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the programmable resistive elements from previous fabrication steps.
Public/Granted literature
- US20100221888A1 Programmable Resistive RAM and Manufacturing Method Public/Granted day:2010-09-02
Information query
IPC分类: