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US08178388B2 Programmable resistive RAM and manufacturing method 有权
可编程电阻RAM及制造方法

Programmable resistive RAM and manufacturing method
Abstract:
Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the programmable resistive elements from previous fabrication steps.
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