Invention Grant
US08178450B2 TiO2-containing silica glass and optical member for EUV lithography using high energy densities as well as special temperature controlled process for its manufacture
失效
含TiO 2的石英玻璃和用于EUV光刻的光学构件，使用高能量密度以及用于其制造的特殊温度控制方法
- Patent Title: TiO2-containing silica glass and optical member for EUV lithography using high energy densities as well as special temperature controlled process for its manufacture
- Patent Title (中): 含TiO 2的石英玻璃和用于EUV光刻的光学构件，使用高能量密度以及用于其制造的特殊温度控制方法
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Application No.: US12868900Application Date: 2010-08-26
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Publication No.: US08178450B2Publication Date: 2012-05-15
- Inventor: Akio Koike , Kenta Saito , Long Shao , Yasutomi Iwahashi , Shinya Kikugawa
- Applicant: Akio Koike , Kenta Saito , Long Shao , Yasutomi Iwahashi , Shinya Kikugawa
- Applicant Address: JP Tokyo
- Assignee: Asahi Glass Company, Limited
- Current Assignee: Asahi Glass Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-044811 20080226
- Main IPC: C03C3/06
- IPC: C03C3/06 ; C03C3/04 ; C03B37/018
Abstract:
The present invention provides a TiO2—SiO2 glass whose coefficient of linear thermal expansion in the range of the time of irradiation with EUV light is substantially zero when used as an optical member of an exposure tool for EUVL and which has extremely high surface smoothness. The present invention relates to a TiO2-containing silica glass having a TiO2 content of from 7.5 to 12% by mass, a temperature at which a coefficient of linear thermal expansion is 0 ppb/° C., falling within the range of from 40 to 110° C., and a standard deviation (σ) of a stress level of striae of 0.03 MPa or lower within an area of 30 mm×30 mm in at least one plane.
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