Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12837117Application Date: 2010-07-15
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Publication No.: US08178880B2Publication Date: 2012-05-15
- Inventor: Shunpei Yamazaki , Yasuyuki Arai
- Applicant: Shunpei Yamazaki , Yasuyuki Arai
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2000-128536 20000427
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.
Public/Granted literature
- US20100276696A1 Semiconductor Device and Method of Fabricating the Same Public/Granted day:2010-11-04
Information query
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