Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12923062Application Date: 2010-08-31
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Publication No.: US08178910B2Publication Date: 2012-05-15
- Inventor: Toshio Nakajima
- Applicant: Toshio Nakajima
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2007-222839 20070829
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
The semiconductor device according to the present invention includes an SJMOSFET having a plurality of base regions formed at an interval from each other and an SBD (Schottky Barrier Diode) having a Schottky junction between the plurality of base regions. The SBD is provided in parallel with a parasitic diode of the SJMOSFET.
Public/Granted literature
- US20100320538A1 Semiconductor device Public/Granted day:2010-12-23
Information query
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