Invention Grant
US08178927B2 Integrated circuits having a contact structure having an elongate structure and methods for manufacturing the same 有权
具有细长结构的接触结构的集成电路及其制造方法

  • Patent Title: Integrated circuits having a contact structure having an elongate structure and methods for manufacturing the same
  • Patent Title (中): 具有细长结构的接触结构的集成电路及其制造方法
  • Application No.: US12152471
    Application Date: 2008-05-14
  • Publication No.: US08178927B2
    Publication Date: 2012-05-15
  • Inventor: Lars Bach
  • Applicant: Lars Bach
  • Applicant Address: DE Munich
  • Assignee: Qimonda AG
  • Current Assignee: Qimonda AG
  • Current Assignee Address: DE Munich
  • Agent John S. Economou
  • Main IPC: H01L21/70
  • IPC: H01L21/70
Integrated circuits having a contact structure having an elongate structure and methods for manufacturing the same
Abstract:
In an embodiment, an integrated circuit is provided. The integrated circuit may include an active area extending along a first direction corresponding to a current flow direction through the active area, a contact structure having an elongate structure. The contact structure may be electrically coupled with the active area. Furthermore, the contact structure may be arranged such that the length direction of the contact structure forms a non-zero angle with the first direction of the active area.
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