Invention Grant
- Patent Title: Wafer level package with die receiving through-hole and method of the same
- Patent Title (中): 晶圆级封装带芯片接收通孔及其方法
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Application No.: US11648688Application Date: 2007-01-03
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Publication No.: US08178963B2Publication Date: 2012-05-15
- Inventor: Wen-Kun Yang
- Applicant: Wen-Kun Yang
- Applicant Address: TW Hsinchu County
- Assignee: Advanced Chip Engineering Technology Inc.
- Current Assignee: Advanced Chip Engineering Technology Inc.
- Current Assignee Address: TW Hsinchu County
- Agency: Kusner & Jaffe
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
The present invention discloses a structure of package comprising: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die disposed within the die receiving through hole; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; and a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure.
Public/Granted literature
- US20080157336A1 Wafer level package with die receiving through-hole and method of the same Public/Granted day:2008-07-03
Information query
IPC分类: