Invention Grant
- Patent Title: Reliable charge pump circuit
- Patent Title (中): 可靠的电荷泵电路
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Application No.: US12793667Application Date: 2010-06-03
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Publication No.: US08179175B2Publication Date: 2012-05-15
- Inventor: Weiyun Tang
- Applicant: Weiyun Tang
- Applicant Address: CN Chengdu, Sichuan Province
- Assignee: IPGoal Microelectronics (SiChaun) Co., Ltd.
- Current Assignee: IPGoal Microelectronics (SiChaun) Co., Ltd.
- Current Assignee Address: CN Chengdu, Sichuan Province
- Priority: CN200910059567 20090611
- Main IPC: H03L7/06
- IPC: H03L7/06

Abstract:
A reliable charge pump circuit includes an operational amplifier; an upper current mirror; a lower current mirror; a startup circuit; and an anti-lock circuit, wherein the anti-lock circuit includes a current source and a diode-connected NMOS transistor, which increases the driving strength of the operational amplifier to two NMOS transistors connected to an output node of the operational amplifier, so as to prevent deadlock caused by multiple stable status and improve production yield.
Public/Granted literature
- US20100315154A1 Reliable Charge Pump Circuit Public/Granted day:2010-12-16
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