Invention Grant
- Patent Title: Booster circuit, semiconductor device, and electronic apparatus
- Patent Title (中): 助推器电路,半导体器件和电子设备
-
Application No.: US13029330Application Date: 2011-02-17
-
Publication No.: US08179191B2Publication Date: 2012-05-15
- Inventor: Hajime Kimura
- Applicant: Hajime Kimura
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2004-080124 20040319
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
A conventional circuit requires a booster circuit for generating a voltage higher than an external power supply voltage, thus low power consumption is difficult to be achieved. In addition, a display device incorporating the aforementioned conventional switching element for booster circuit has problems in that the current load is increased and the power supply becomes unstable with a higher output current. The invention provides a booster circuit including a first transistor, a second transistor, a first capacitor element, a second capacitor element, a diode, and an inverter, wherein one electrode of the first transistor is maintained at a predetermined potential, the output of the inverter is connected to the gate electrode of the first transistor and one electrode of the second transistor through the second capacitor element, the input of the inverter is connected to the other electrode of the first transistor through the first capacitor element and connected to the gate electrode of the second transistor, and the diode is connected between the other electrode of the first transistor and the other electrode of the second transistor so as to be forwardly biased.
Public/Granted literature
- US20110133823A1 Booster Circuit, Semiconductor Device, and Electronic Apparatus Public/Granted day:2011-06-09
Information query
IPC分类: