Invention Grant
US08179304B2 Direct-current blocking circuit, hybrid circuit device, transmitter, receiver, transmitter-receiver, and radar device
有权
直流阻塞电路,混合电路装置,发射机,接收机,发射机和雷达装置
- Patent Title: Direct-current blocking circuit, hybrid circuit device, transmitter, receiver, transmitter-receiver, and radar device
- Patent Title (中): 直流阻塞电路,混合电路装置,发射机,接收机,发射机和雷达装置
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Application No.: US12664638Application Date: 2008-04-02
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Publication No.: US08179304B2Publication Date: 2012-05-15
- Inventor: Kazuki Hayata , Kazumi Nakazuru
- Applicant: Kazuki Hayata , Kazumi Nakazuru
- Applicant Address: JP Kyoto
- Assignee: Kyocera Corporation
- Current Assignee: Kyocera Corporation
- Current Assignee Address: JP Kyoto
- Agency: DLA Piper LLP (US)
- Priority: JP2007-157957 20070614; JP2007-199973 20070731; JP2007-341452 20071228
- International Application: PCT/JP2008/056609 WO 20080402
- International Announcement: WO2008/152852 WO 20081218
- Main IPC: G01S13/00
- IPC: G01S13/00 ; G01S13/08 ; H01Q1/38 ; H01Q13/00 ; H01Q1/00 ; H01P1/20

Abstract:
The invention relates to a direct-current blocking circuit, and a hybrid circuit device, a transmitter, a receiver, a transmitter-receiver and a radar device that have the direct-current blocking circuit. A dielectric substrate (2) is provided with a conductor layer (3) disposed parallel with the dielectric substrate (2), first and second planar lines (4, 5) each containing a part of the conductor layer (3), and a waveguide (6) containing a part of the conductor layer (3). The first and second planar lines (4, 5) are located on one surface (2a) side of the dielectric substrate (2) with respect to the conductor layer (3), and the waveguide (6) is located on another surface (2b) side of the dielectric substrate (2). In a transmission direction (X) of electric signals, as to the waveguide (6), its one end overlaps with one end of the first planar line (4), and its another end overlaps with one end of the second planar line (5). In the overlapped regions, first and second through-holes (24, 25) are so formed as to penetrate the conductor layer (3) in its thickness direction.
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