Invention Grant
US08179706B2 Method for modifying data more than once in a multi-level cell memory location within a memory array 有权
用于在存储器阵列中的多级单元存储器位置中多次修改数据的方法

Method for modifying data more than once in a multi-level cell memory location within a memory array
Abstract:
A method and apparatus for marking a block of multi-level memory cells for performance of a block management function by programming at least one bit in a lower page of the memory cell block such that a first logic state is stored in the at least one bit in the lower page; programming at least one bit in an upper page of the memory cell block such that the first logic state is stored in the at least one bit in the upper page; reprogramming the at least one bit in the upper page such that the at least one bit transitions from the first logic state to a second logic state; identifying the first logic state in the at least one bit of a lower page and the transition of at least one corresponding bit in the upper page from the first logic state to the second logic state; and in response, marking the corresponding memory cell block for performance of a block management function.
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