Invention Grant
- Patent Title: Method and apparatus for programming flash memory
- Patent Title (中): 用于编程闪存的方法和装置
-
Application No.: US13154470Application Date: 2011-06-07
-
Publication No.: US08179726B2Publication Date: 2012-05-15
- Inventor: Erwin E. Yu , Ebrahim Abedifard , Frederick T. Jaffin , Uday Chandrasekhar
- Applicant: Erwin E. Yu , Ebrahim Abedifard , Frederick T. Jaffin , Uday Chandrasekhar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method and apparatus that provides the ability to control programming pulses having different widths and/or voltages in a flash memory device. The widths and/or voltage levels of programming pulses are set to achieve programming of all memory cells of an array using a minimum number of programming pulses.
Public/Granted literature
- US20110235429A1 METHOD AND APPARATUS FOR PROGRAMMING FLASH MEMORY Public/Granted day:2011-09-29
Information query
