Invention Grant
- Patent Title: Ion implantation through laser fields
- Patent Title (中): 离子注入激光场
-
Application No.: US12712816Application Date: 2010-02-25
-
Publication No.: US08183546B2Publication Date: 2012-05-22
- Inventor: Deepak A. Ramappa
- Applicant: Deepak A. Ramappa
- Applicant Address: US MA Gloucester
- Assignee: VARIAN Semiconductor Equipment Associates, Inc.
- Current Assignee: VARIAN Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: G21K5/04
- IPC: G21K5/04

Abstract:
Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular embodiment, the lasers are generated while ions are directed toward the workpiece and then stopped. Ions are still directed toward the workpiece after the lasers are stopped.
Public/Granted literature
- US20110204264A1 ION IMPLANTATION THROUGH LASER FIELDS Public/Granted day:2011-08-25
Information query