Invention Grant
US08184668B2 Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs)
有权
在垂直腔面发射激光器（VCSEL）中降低电容并改善高频性能的方法
- Patent Title: Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs)
- Patent Title (中): 在垂直腔面发射激光器（VCSEL）中降低电容并改善高频性能的方法
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Application No.: US12985487Application Date: 2011-01-06
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Publication No.: US08184668B2Publication Date: 2012-05-22
- Inventor: Decai Sun , Phil Floyd , Wenjun Fan
- Applicant: Decai Sun , Phil Floyd , Wenjun Fan
- Applicant Address: US CA San Jose
- Assignee: Neophotonics Corporation
- Current Assignee: Neophotonics Corporation
- Current Assignee Address: US CA San Jose
- Agency: Turocy & Watson, LLP
- Main IPC: H01S3/10
- IPC: H01S3/10
Abstract:
A VCSEL structure is provided. The VCSEL structure comprises a substrate. The structure may also include one or more conducting layers positioned on the substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.
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