Invention Grant
- Patent Title: Fabricating process of structure with embedded circuit
- Patent Title (中): 嵌入式电路结构的制造工艺
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Application No.: US12211637Application Date: 2008-09-16
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Publication No.: US08187478B2Publication Date: 2012-05-29
- Inventor: Yi-Chun Liu
- Applicant: Yi-Chun Liu
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: J.C. Patents
- Priority: TW97120997A 20080605
- Main IPC: H01B13/00
- IPC: H01B13/00

Abstract:
A fabricating process of a structure with an embedded circuit is described as follows. Firstly, a substrate having an upper surface and a lower surface opposite to the upper surface is provided. Afterward, a dielectric layer is formed on the upper surface of the substrate. Next, a plating-resistant layer is formed on the dielectric layer. Then, the plating-resistant layer and the dielectric layer are patterned for forming an recess pattern on the dielectric layer. Subsequently, a conductive base layer is formed in the recess pattern by using a chemical method, and the plating-resistant layer is exposed by the conductive base layer. After that, the plating-resistant layer is removed.
Public/Granted literature
- US20090301997A1 FABRICATING PROCESS OF STRUCTURE WITH EMBEDDED CIRCUIT Public/Granted day:2009-12-10
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