Systems and methods are provided for measuring aberration in a lithographic apparatus. A radiation beam is modulated using an array of individually controllable elements, and the modulated beam is projected using a projection system. A pattern is provided on the array of individually controllable elements to modulate the radiation beam, and the pattern comprises a repeating structure that is formed from a plurality of features that are dimensioned such that first order diffraction of the radiation beam substantially fills the pupil of the projection system. A sensor detects the projected radiation and measures interference in the radiation projected by the projection system. Aberration in the detected radiation beam is then measured.