Invention Grant
US08189385B2 Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array 有权
非易失性半导体存储器件,其制造方法和非易失性存储器阵列

Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
Abstract:
A floating gate made of polysilicon is provided on a semiconductor substrate through the medium of a gate insulator. A side-wall insulating film is provided on each side wall of the floating gate. A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance. A second impurity diffusion layer, which occupies a space within the semiconductor substrate, overlaps with the floating gate. Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
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