Invention Grant
US08189385B2 Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
有权
非易失性半导体存储器件,其制造方法和非易失性存储器阵列
- Patent Title: Nonvolatile semiconductor memory device, method for manufacturing the same, and nonvolatile memory array
- Patent Title (中): 非易失性半导体存储器件,其制造方法和非易失性存储器阵列
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Application No.: US12341209Application Date: 2008-12-22
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Publication No.: US08189385B2Publication Date: 2012-05-29
- Inventor: Kouichi Yamada
- Applicant: Kouichi Yamada
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-333612 20071226; JP2008-035119 20080215; JP2008-035120 20080215; JP2008-166507 20080625
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A floating gate made of polysilicon is provided on a semiconductor substrate through the medium of a gate insulator. A side-wall insulating film is provided on each side wall of the floating gate. A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance. A second impurity diffusion layer, which occupies a space within the semiconductor substrate, overlaps with the floating gate. Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
Public/Granted literature
- US20090168529A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, METHOD FOR MANUFACTURING THE SAME, AND NONVOLATILE MEMORY ARRAY Public/Granted day:2009-07-02
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