Invention Grant
- Patent Title: Flash memory with multi-bit read
- Patent Title (中): 具有多位读取的闪存
-
Application No.: US12790556Application Date: 2010-05-28
-
Publication No.: US08189387B2Publication Date: 2012-05-29
- Inventor: William Henry Radke
- Applicant: William Henry Radke
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C16/08
- IPC: G11C16/08
Abstract:
A memory device is described that comprises determining which read data state of more than 2X read data states a memory cell is in after the memory cell has been programmed to one of 2X program data states, wherein the determined read data state corresponds to X digits of read data and at least one digit of error data, and wherein X is a positive integer.
Public/Granted literature
- US20100238726A1 FLASH MEMORY WITH MULTI-BIT READ Public/Granted day:2010-09-23
Information query
