Invention Grant
US08189409B2 Readout circuit for rewritable memories and readout method for same
有权
可重写存储器的读出电路及其读出方法
- Patent Title: Readout circuit for rewritable memories and readout method for same
- Patent Title (中): 可重写存储器的读出电路及其读出方法
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Application No.: US12716010Application Date: 2010-03-02
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Publication No.: US08189409B2Publication Date: 2012-05-29
- Inventor: Johannes Fellner , Gregor Schatzberger
- Applicant: Johannes Fellner , Gregor Schatzberger
- Applicant Address: AT Unterpremstätten
- Assignee: austriamicrosystems AG
- Current Assignee: austriamicrosystems AG
- Current Assignee Address: AT Unterpremstätten
- Agency: Cozen O'Connor
- Priority: DE102009011255 20090302
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
In one embodiment, a readout circuit for rewritable memories comprises a control logic unit with an input for supplying a start signal and with several outputs for providing a respective control signal as a function of start signal, a first terminal for switchable connection to a first memory cell by means of a first switch, and a second terminal for switchable connection by means of a second switch to a second memory cell, and a readout unit coupled to the control logic unit, as well as to the first and second terminals, with an output for providing an output signal as a function of a state of the first and/or the second memory cell and as a function of the control signals, wherein the readout circuit is designed for self-terminating operation in a reading mode and in a test mode. A readout method for rewritable memories is additionally provided.
Public/Granted literature
- US20100220532A1 Readout Circuit for Rewritable Memories and Readout Method for Same Public/Granted day:2010-09-02
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