Invention Grant
US08189635B2 Laser diode having nano patterns and method of fabricating the same
有权
具有纳米图案的激光二极管及其制造方法
- Patent Title: Laser diode having nano patterns and method of fabricating the same
- Patent Title (中): 具有纳米图案的激光二极管及其制造方法
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Application No.: US12768073Application Date: 2010-04-27
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Publication No.: US08189635B2Publication Date: 2012-05-29
- Inventor: Shiro Sakai
- Applicant: Shiro Sakai
- Applicant Address: KR Ansan-si JP Tokushima
- Assignee: Seoul Opto Device Co., Ltd.,The University of Tokushima
- Current Assignee: Seoul Opto Device Co., Ltd.,The University of Tokushima
- Current Assignee Address: KR Ansan-si JP Tokushima
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2007-0101262 20071009
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/08
Abstract:
A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode.
Public/Granted literature
- US20100208762A1 LASER DIODE HAVING NANO PATTERNS AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-08-19
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