Invention Grant
- Patent Title: Feedback for polishing rate correction in chemical mechanical polishing
- Patent Title (中): 化学机械抛光抛光率校正的反馈
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Application No.: US12781644Application Date: 2010-05-17
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Publication No.: US08190285B2Publication Date: 2012-05-29
- Inventor: Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q Lee
- Applicant: Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q Lee
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: G06F19/00
- IPC: G06F19/00 ; B24B49/04 ; B24B49/12

Abstract:
A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
Public/Granted literature
- US20110281501A1 FEEDBACK FOR POLISHING RATE CORRECTION IN CHEMICAL MECHANICAL POLISHING Public/Granted day:2011-11-17
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