Invention Grant
- Patent Title: Memory device having staggered memory operations
- Patent Title (中): 具有交错存储器操作的存储器件
-
Application No.: US10920508Application Date: 2004-08-17
-
Publication No.: US08190808B2Publication Date: 2012-05-29
- Inventor: Lawrence Lai , Wayne S. Richardson , Chad A. Bellows
- Applicant: Lawrence Lai , Wayne S. Richardson , Chad A. Bellows
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28

Abstract:
A memory system includes logical banks divided into sub-banks or collections of sub-banks. The memory system responds to memory-access requests (e.g., read and write) directed to a given logical bank by sequentially accessing sub-banks or collections of sub-banks. Sequential access reduces the impact of power-supply spikes induced by memory operations, and thus facilitates improved system performance. Some embodiments of the memory system combine sequential sub-bank access with other performance-enhancing features, such as wider power buses or increased bypass capacitance, to further enhance performance.
Public/Granted literature
- US20060039227A1 Memory device having staggered memory operations Public/Granted day:2006-02-23
Information query