Invention Grant
- Patent Title: Process gas introducing mechanism and plasma processing device
- Patent Title (中): 工艺气体引入机构和等离子体处理装置
-
Application No.: US12457834Application Date: 2009-06-23
-
Publication No.: US08191505B2Publication Date: 2012-06-05
- Inventor: Takayuki Kamaishi , Akinori Shimamura , Masato Morishima
- Applicant: Takayuki Kamaishi , Akinori Shimamura , Masato Morishima
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-127201 20030502; JP2003-180865 20030625
- Main IPC: C23C16/507
- IPC: C23C16/507 ; C23C16/503 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22

Abstract:
A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.
Public/Granted literature
- US20090260762A1 Process gas introducing mechanism and plasma processing device Public/Granted day:2009-10-22
Information query
IPC分类: