Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12815693Application Date: 2010-06-15
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Publication No.: US08191758B2Publication Date: 2012-06-05
- Inventor: Kanako Sawada , Hideo Aoki , Naoyuki Komuta , Koji Ogiso
- Applicant: Kanako Sawada , Hideo Aoki , Naoyuki Komuta , Koji Ogiso
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-146153 20090619
- Main IPC: B23K31/02
- IPC: B23K31/02 ; H01L21/44 ; H05K3/00

Abstract:
In one embodiment, a first substrate having first solder bumps and a second substrate having second solder bumps are stacked while temporarily tacking the solder bumps to each other, and then a stack is disposed inside a furnace. The gas in the furnace is exhausted to be in a reduced pressure atmosphere, and then a carboxylic acid gas is introduced into the furnace. While increasing a temperature inside the furnace where the carboxylic acid gas is introduced, the gas in the furnace is exhausted to be in a reduced pressure atmosphere at a temperature in a range from a reduction temperature of oxide films by the carboxylic acid gas to lower than a melting temperature of the solder bumps. By increasing the temperature inside the furnace up to a temperature in a range of the melting temperature of the solder bumps and higher, the first solder bumps and the second solder bumps are melted and joined.
Public/Granted literature
- US20100320258A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-12-23
Information query
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