Invention Grant
US08192592B2 Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same
有权
形成包括碲的相变材料层的方法和使用该相变材料层的相变存储器件的制造方法
- Patent Title: Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same
- Patent Title (中): 形成包括碲的相变材料层的方法和使用该相变材料层的相变存储器件的制造方法
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Application No.: US12051043Application Date: 2008-03-19
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Publication No.: US08192592B2Publication Date: 2012-06-05
- Inventor: Do-Hyung Kim , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Gyu-Hwan Oh
- Applicant: Do-Hyung Kim , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Gyu-Hwan Oh
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2007-0027395 20070321
- Main IPC: C23C14/04
- IPC: C23C14/04
Abstract:
The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.
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