Methods are provided for fabricating an electronic device having at least one sidewall spacer formed adjacent a selected surface. In one embodiment, the method includes the step of depositing spacer material adjacent first and second raised structures formed on the substrate and extending along substantially perpendicular axes. The method further includes the step of selectively removing spacer material laterally adjacent one of the first raised structure and the second raised structure. During the step of selectively removing, the electronic device is bombarded with ions from a first predetermined direction forming a first predetermined grazing angle with the substrate such that the spacer material adjacent a first sidewall of the first raised structure is substantially exposed to the ion bombardment while the spacer material adjacent opposing sidewalls of the second raised structure is substantially shielded therefrom.