Invention Grant
- Patent Title: Aluminum thick film composition(s), electrode(s), semiconductor device(s), and methods of making thereof
- Patent Title (中): 铝厚膜组合物,电极,半导体器件及其制造方法
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Application No.: US12891087Application Date: 2010-09-27
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Publication No.: US08192651B2Publication Date: 2012-06-05
- Inventor: Richard John Sheffield Young , Michael Rose , Julie Ann Raby
- Applicant: Richard John Sheffield Young , Michael Rose , Julie Ann Raby
- Applicant Address: US DE Wilmington
- Assignee: E. I. du Pont de Nemours and Company Dupont (UK) Limited
- Current Assignee: E. I. du Pont de Nemours and Company Dupont (UK) Limited
- Current Assignee Address: US DE Wilmington
- Main IPC: H01B1/22
- IPC: H01B1/22 ; B05D5/12 ; H01L31/0224

Abstract:
The present invention is directed to a thick film conductor composition comprised of (a) aluminum-containing powder; (b) one or more glass frit compositions; dispersed in (c) organic medium wherein at least one of said glass frit compositions has a softening point of less than 400° C.
Public/Granted literature
- US20110014743A1 ALUMINUM THICK FILM COMPOSITION(S), ELECTRODE(S), SEMICONDUCTOR DEVICE(S), AND METHODS OF MAKING THEREOF Public/Granted day:2011-01-20
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