Invention Grant
- Patent Title: Edge etched silicon wafers
- Patent Title (中): 边缘蚀刻硅片
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Application No.: US12415555Application Date: 2009-03-31
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Publication No.: US08192822B2Publication Date: 2012-06-05
- Inventor: Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
- Applicant: Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: B32B3/02
- IPC: B32B3/02
Abstract:
The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
Public/Granted literature
- US20090246444A1 EDGE ETCHED SILICON WAFERS Public/Granted day:2009-10-01
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