Invention Grant
- Patent Title: Advanced phase shift lithography and attenuated phase shift mask for narrow track width d write pole definition
- Patent Title (中): 高级相移光刻和衰减相移掩模,用于窄轨宽d写磁极定义
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Application No.: US12714159Application Date: 2010-02-26
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Publication No.: US08192900B2Publication Date: 2012-06-05
- Inventor: Hong Du , Douglas J. Werner , Yi Zheng
- Applicant: Hong Du , Douglas J. Werner , Yi Zheng
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A method for patterning a wafer using a phase shifting photolithography that can produce a critical symmetrical 2-dimensional structure such as a magnetic write pole of a magnetic write head. In one aspect of the invention, a photolithographic mask has an opaque portion with narrow, transparent phase shifting regions at either side of the opaque portion. A non-phase shifted region extends beyond the narrow phase shifted portion at either side of the structure. The phase shifted regions are symmetrical about the opaque region so that the image produced on the wafer is completely symmetrical. In another aspect of the invention, a phase shifted region in formed in a transparent medium with non-phase shifted regions at either side of the phase shifted region. The transition between the phase shifted region and non-phase shifted region alone defines a pattern on the wafer, without the need for an opaque structure on the mask.
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