Invention Grant
- Patent Title: Replaced photomask
- Patent Title (中): 替换光掩模
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Application No.: US13100585Application Date: 2011-05-04
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Publication No.: US08192902B2Publication Date: 2012-06-05
- Inventor: Kuo-Kuei Fu
- Applicant: Kuo-Kuei Fu
- Applicant Address: TW Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Tao-Yuan Hsien
- Agency: Volpe and Koenig, P.C.
- Priority: TW97141254A 20081027
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
The present disclosure relates to a replaced photomask including a substrate and a plurality of etched patterns. The plurality of etched patterns are formed on the substrate according to a photomask layout which has a plurality of photomask layout patterns categorized into a plurality of first groups. Each of the first groups includes a plurality of identical initial layout patterns, and each of the first groups is reproduced from an initial layout having a plurality of initial layout patterns categorized into a plurality of second groups to which the plurality of first groups respectively correspond, wherein the plurality of photomask layout patterns respectively correspond to the plurality of initial layout patterns and at least one of the plurality of the photomask layout patterns is replaced by a standardized photomask layout pattern.
Public/Granted literature
- US20110207034A1 MATCHING METHOD OF PATTERN LAYOUTS FROM INVERSE LITHOGRAPHY Public/Granted day:2011-08-25
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