Invention Grant
- Patent Title: MEMS process method for high aspect ratio structures
- Patent Title (中): 用于高纵横比结构的MEMS工艺方法
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Application No.: US12966397Application Date: 2010-12-13
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Publication No.: US08193005B1Publication Date: 2012-06-05
- Inventor: Charles J. Parrish , Steven M. Shank
- Applicant: Charles J. Parrish , Steven M. Shank
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Wood, Herron & Evans, LLP
- Agent Anthony J. Canale
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/311 ; H01L21/302 ; H01L21/461

Abstract:
Methods for the controlled manufacture of high aspect ratio features. The method may include forming a layer stack on a top surface of a substrate and forming features in the layers of the layer stack. The high aspect ratio features may be defined using a resist layer that is patterned with a photolithographic condition. After removing at least one of the layers removed from the top of the layer stack, a feature dimension may be measured for features at different locations on the substrate. The method may further include changing the photolithographic condition based on the measured dimension and processing another substrate using the changed photolithographic condition.
Public/Granted literature
- US20120149133A1 MEMS PROCESS METHOD FOR HIGH ASPECT RATIO STRUCTURES Public/Granted day:2012-06-14
Information query
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