Invention Grant
US08193020B2 Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
有权
高品质N面GaN，InN和AlN及其合金的金属有机化学气相沉积异质外延生长方法
- Patent Title: Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
- Patent Title (中): 高品质N面GaN，InN和AlN及其合金的金属有机化学气相沉积异质外延生长方法
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Application No.: US12466705Application Date: 2009-05-15
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Publication No.: US08193020B2Publication Date: 2012-06-05
- Inventor: Stacia Keller , Umesh K. Mishra , Nicholas K. Fichtenbaum
- Applicant: Stacia Keller , Umesh K. Mishra , Nicholas K. Fichtenbaum
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
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