Asymmetric silicon-on-insulator SRAM cell

Invention Grant

US08193062B2 Asymmetric silicon-on-insulator SRAM cell 有权

Title translation: 不对称硅绝缘体上SRAM SRAM单元

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Patent Title: Asymmetric silicon-on-insulator SRAM cell
Patent Title (中): 不对称硅绝缘体上SRAM SRAM单元
Application No.: US12566717

Application Date: 2009-09-25
Publication No.: US08193062B2

Publication Date: 2012-06-05
Inventor: Leland Chang , Jeffrey W. Sleight
Applicant: Leland Chang , Jeffrey W. Sleight
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Vazken Alexanian
Main IPC: H01L21/8234
IPC: H01L21/8234

Asymmetric silicon-on-insulator SRAM cell

Abstract:

A memory cell having N transistors including at least one pair of access transistors, one pair of pull-down transistors, and one pair of pull-up transistors to form a memory cell, wherein N is an integer at least equal to six, wherein each of the access transistors and each of the pull-down transistors is a same one of an n-type or a p-type transistor, and each of the pull-up transistors is the other of an n-type or a p-type transistor, wherein at least one of the pair of the pull down transistors and the pair of the pull up transistors are asymmetric.

Abstract(Chinese):

具有N个晶体管的存储单元，其包括至少一对存取晶体管，一对下拉晶体管和一对上拉晶体管，以形成存储单元，其中N是至少等于6的整数，其中每个的存取晶体管，并且每个下拉晶体管是n型或p型晶体管中的相同的一个，并且每个上拉晶体管是n型或p型晶体管中的另一个，其中所述一对下拉晶体管和所述一对上拉晶体管中的至少一个是不对称的。

Public/Granted literature

US20110073958A1 ASYMMETRIC SILICON-ON-INSULATOR SRAM CELL Public/Granted day:2011-03-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺