Invention Grant
US08193080B2 Method for fabricating semiconductor device and plasma doping system
有权
制造半导体器件和等离子体掺杂系统的方法
- Patent Title: Method for fabricating semiconductor device and plasma doping system
- Patent Title (中): 制造半导体器件和等离子体掺杂系统的方法
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Application No.: US12922358Application Date: 2010-03-26
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Publication No.: US08193080B2Publication Date: 2012-06-05
- Inventor: Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno
- Applicant: Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-173964 20090727
- International Application: PCT/JP2010/002215 WO 20100326
- International Announcement: WO2011/013271 WO 20110203
- Main IPC: H01L21/42
- IPC: H01L21/42
Abstract:
An impurity is introduced into a fin-type semiconductor region (102) formed on a substrate (100) using a plasma doping process, thereby forming an impurity-introduced layer (105). Carbon is introduced into the fin-type semiconductor region (102) using a plasma doping process to overlap at least a part of the impurity-introduced layer (105), thereby forming a carbon-introduced layer.
Public/Granted literature
- US20110151652A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PLASMA DOPING SYSTEM Public/Granted day:2011-06-23
Information query
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