Invention Grant
- Patent Title: Method of manufacturing semiconductor device and substrate processing apparatus
- Patent Title (中): 制造半导体器件和衬底处理设备的方法
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Application No.: US12230782Application Date: 2008-09-04
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Publication No.: US08193083B2Publication Date: 2012-06-05
- Inventor: Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
- Applicant: Sadayoshi Horii , Yoshinori Imai , Mika Karasawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-231103 20070906; JP2008-181943 20080711
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature.
Public/Granted literature
- US20090064931A1 Method of manufacturing semiconductor device and substrate processing apparatus Public/Granted day:2009-03-12
Information query
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