Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12700957Application Date: 2010-02-05
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Publication No.: US08193098B2Publication Date: 2012-06-05
- Inventor: Tomoyuki Nakamura
- Applicant: Tomoyuki Nakamura
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-032716 20090216
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method for manufacturing a semiconductor device comprises forming a dielectric film, and oxidizing the dielectric film. In oxidizing the dielectric film, an oxidized gas is supplied to the dielectric film at a heat treatment. Supplying the oxidized gas is performed intermittently a plurality of times while the dielectric film is subjected to heat treatment.
Public/Granted literature
- US20100210082A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-08-19
Information query
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