Invention Grant
- Patent Title: Graphene electronics fabrication
- Patent Title (中): 石墨烯电子制造
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Application No.: US12345760Application Date: 2008-12-30
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Publication No.: US08193455B2Publication Date: 2012-06-05
- Inventor: Ernesto E. Marinero
- Applicant: Ernesto E. Marinero
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: E21B10/64
- IPC: E21B10/64 ; E21B10/66

Abstract:
An electrical circuit structure employing graphene as a charge carrier transport layer. The structure includes a plurality of graphene layers. Electrical contact is made with one of the layer of the plurality of graphene layers, so that charge carriers travel only through that one layer. By constructing the active graphene layer within or on a plurality of graphene layers, the active graphene layer maintains the necessary planarity and crystalline integrity to ensure that the high charge carrier mobility properties of the active graphene layer remain intact.
Public/Granted literature
- US20100163285A1 GRAPHENE ELECTRONICS FABRICATION Public/Granted day:2010-07-01
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