Invention Grant
- Patent Title: Radiation detector
- Patent Title (中): 辐射检测器
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Application No.: US12729257Application Date: 2010-03-23
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Publication No.: US08193510B2Publication Date: 2012-06-05
- Inventor: Fumito Nariyuki , Yoshihiro Okada
- Applicant: Fumito Nariyuki , Yoshihiro Okada
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: SOLARIS Intellectual Property Group, PLLC
- Priority: JP2009-087827 20090331
- Main IPC: H01L25/00
- IPC: H01L25/00

Abstract:
The present invention provides a radiation detector with improved workability in manufacturing processes and maintenance processes. Namely, a first housing and a second housing can be opened, to allow accessing of a TFT substrate and a radiation converting layer disposed in the first housing, and to allow accessing of a circuit substrate disposed in the second housing. Accordingly, higher workability can be achieved in manufacturing processes such as connecting of switching elements of the TFT substrate and the circuit substrate, and in maintenance processes of the TFT substrate and the circuit substrate.
Public/Granted literature
- US20100243909A1 RADIATION DETECTOR Public/Granted day:2010-09-30
Information query
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