Electronic field effect devices

Invention Grant

US08193538B2 Electronic field effect devices 有权

Title translation: 电子场效应器

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Patent Title: Electronic field effect devices
Patent Title (中): 电子场效应器
Application No.: US12523960

Application Date: 2008-01-22
Publication No.: US08193538B2

Publication Date: 2012-06-05
Inventor: Christopher John Howard Wort , Geoffrey Alan Scarsbrook , Ian Friel , Richard Stuart Balmer
Applicant: Christopher John Howard Wort , Geoffrey Alan Scarsbrook , Ian Friel , Richard Stuart Balmer
Applicant Address: GB
Assignee: Diamond Microwave Devices Limited
Current Assignee: Diamond Microwave Devices Limited
Current Assignee Address: GB
Agency: Bryan Cave LLP
Priority: GB0701186.9 20070122; GB0705523.9 20070322; GB0705524.7 20070322; GB0709716.5 20070521; GB0713464.6 20070711
International Application: PCT/IB2008/050216 WO 20080122
International Announcement: WO2008/090512 WO 20080731
Main IPC: H01L29/15
IPC: H01L29/15

Abstract:

Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.

Abstract(Chinese):

公开了电子场效应装置及这些电子场效应装置的制造方法。特别地，公开了一种电子场效应器件，其由于由金刚石与极性材料组合形成的简单结构中形成高度移动的二维电荷载体气体而具有改善的电性能。

Public/Granted literature

US20100078651A1 ELECTRONIC FIELD EFFECT DEVICES AND METHODS FOR THEIR MANUFACTURE Public/Granted day:2010-04-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/12	..按其构成材料的特征区分的
H01L29/15	... · ·带有周期性或准周期性电势变化的结构，如多量子阱、超晶格（应用于光控制的这种结构入G02F1/017；应用于半导体激光器的入H01S5/34）