Invention Grant
- Patent Title: Semiconductor light emitting device of junction-down type and semiconductor light emitting element of junction-down type
- Patent Title (中): 结合型半导体发光元件和结合型半导体发光元件
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Application No.: US12320841Application Date: 2009-02-05
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Publication No.: US08193552B2Publication Date: 2012-06-05
- Inventor: Yuji Ishida
- Applicant: Yuji Ishida
- Applicant Address: JP Kyoto-fu
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Rabin & Berdo, P.C.
- Priority: JPP2008-028126 20080207; JPP2008-225988 20080903
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
In a semiconductor light emitting device of junction-down type, a semiconductor light emitting element having a stripe part is provided with a bonding part for die bonding in a part of a surface thereof where the stripe part is formed, the bonding part being at a position away from the stripe part, and being junction-down bonded onto an electrode pattern on a holding substrate.
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