Invention Grant

  • Patent Title: Semiconductor light emitting device of junction-down type and semiconductor light emitting element of junction-down type
  • Patent Title (中): 结合型半导体发光元件和结合型半导体发光元件
  • Application No.: US12320841
    Application Date: 2009-02-05
  • Publication No.: US08193552B2
    Publication Date: 2012-06-05
  • Inventor: Yuji Ishida
  • Applicant: Yuji Ishida
  • Applicant Address: JP Kyoto-fu
  • Assignee: Rohm Co., Ltd.
  • Current Assignee: Rohm Co., Ltd.
  • Current Assignee Address: JP Kyoto-fu
  • Agency: Rabin & Berdo, P.C.
  • Priority: JPP2008-028126 20080207; JPP2008-225988 20080903
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Semiconductor light emitting device of junction-down type and semiconductor light emitting element of junction-down type
Abstract:
In a semiconductor light emitting device of junction-down type, a semiconductor light emitting element having a stripe part is provided with a bonding part for die bonding in a part of a surface thereof where the stripe part is formed, the bonding part being at a position away from the stripe part, and being junction-down bonded onto an electrode pattern on a holding substrate.
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