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Invention Grant
US08193569B2 Non-volatile semiconductor memory device having ion conductive layer and methods of fabricating and operating the same 有权
具有离子传导层的非易失性半导体存储器件及其制造和操作方法

Non-volatile semiconductor memory device having ion conductive layer and methods of fabricating and operating the same
Abstract:
A non-volatile semiconductor memory device having an ion conductive layer, and methods of fabricating and operating the same are disclosed. The non-volatile memory device may include a substrate, a switching element formed in the substrate, and a storage node connected to the switching element, the storage node may include a lower electrode connected to the switching element, and used as an ion source; a data storage layer formed on the lower electrode, a portion thereof being spaced from the lower electrode; a side electrode spaced from the lower electrode, a side surface thereof being connected to a portion of the data storage layer spaced from the lower electrode; and an upper electrode formed on the data storage layer, or may include a lower electrode connected to the switching element, and used as an ion source; and a data storage layer formed on the lower electrode; an upper electrode formed on the data storage layer.
Abstract(Chinese):

公开了具有离子传导层的非易失性半导体存储器件及其制造和操作方法。 非易失性存储器件可以包括衬底，形成在衬底中的开关元件和连接到开关元件的存储节点，存储节点可以包括连接到开关元件的下电极，并用作离子源; 形成在所述下电极上的数据存储层，其一部分与所述下电极间隔开; 与所述下电极间隔开的侧电极，其侧表面与所述数据存储层的与所述下电极间隔开的部分连接; 以及形成在数据存储层上的上电极，或者可以包括连接到开关元件的下电极，并用作离子源; 和形成在下电极上的数据存储层; 形成在数据存储层上的上电极。

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