Invention Grant
US08193572B2 Electronic device including trenches and discontinuous storage elements
有权
电子设备包括沟槽和不连续的存储元件
- Patent Title: Electronic device including trenches and discontinuous storage elements
- Patent Title (中): 电子设备包括沟槽和不连续的存储元件
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Application No.: US12647250Application Date: 2009-12-24
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Publication No.: US08193572B2Publication Date: 2012-06-05
- Inventor: Chi-Nan Li , Cheong Min Hong
- Applicant: Chi-Nan Li , Cheong Min Hong
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
An electronic device can include a substrate including a first trench having a first bottom and a first wall. The electrode device can also include a first gate electrode within the first trench and adjacent to the first wall and overlying the first bottom of the first trench, and a second gate electrode within the first trench and adjacent to the first gate electrode and overlying the first bottom of the first trench. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between (i) the first gate electrode or the second gate electrode and (ii) the first bottom of the first trench. Processes of forming and using the electronic device are also described.
Public/Granted literature
- US20100096686A1 ELECTRONIC DEVICE INCLUDING TRENCHES AND DISCONTINUOUS STORAGE ELEMENTS Public/Granted day:2010-04-22
Information query
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