Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12458197Application Date: 2009-07-02
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Publication No.: US08193582B2Publication Date: 2012-06-05
- Inventor: Yoshihisa Matsubara
- Applicant: Yoshihisa Matsubara
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-179601 20080709
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8242
Abstract:
A semiconductor device, including: a first transistor formed on a substrate and including an Hf contained film as its gate insulating film; and a second transistor formed on said substrate and having the same conductive type as that of said first transistor, said second transistor including a silicon oxide film and not including an Hf contained film as its gate insulating film is provided.
Public/Granted literature
- US20100006932A1 Semiconductor device and method of manufacturing the same Public/Granted day:2010-01-14
Information query
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