Invention Grant
- Patent Title: Semiconductor component including a drift zone and a drift control zone
- Patent Title (中): 半导体元件包括漂移区和漂移控制区
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Application No.: US12164630Application Date: 2008-06-30
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Publication No.: US08193584B2Publication Date: 2012-06-05
- Inventor: Anton Mauder , Stefan Sedlmaier , Armin Willmeroth
- Applicant: Anton Mauder , Stefan Sedlmaier , Armin Willmeroth
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A semiconductor component including a drift zone and a drift control zone. One embodiment provides a transistor component having a drift zone, a body zone, a source zone and a drain zone. The drift zone is arranged between the body zone and the drain zone. The body zone is arranged between the source zone and the drift zone.
Public/Granted literature
- US20090321804A1 SEMICONDUCTOR COMPONENT INCLUDING A DRIFT ZONE AND A DRIFT CONTROL ZONE Public/Granted day:2009-12-31
Information query
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