Invention Grant
- Patent Title: Multi-layer gate dielectric
- Patent Title (中): 多层栅极电介质
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Application No.: US12615938Application Date: 2009-11-10
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Publication No.: US08193593B2Publication Date: 2012-06-05
- Inventor: Gang Bai
- Applicant: Gang Bai
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A transistor gate dielectric including a first dielectric material having a first dielectric constant and a second dielectric material having a second dielectric constant different from the first dielectric constant.
Public/Granted literature
- US20100052078A1 Multi-Layer Gate Dielectric Public/Granted day:2010-03-04
Information query
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