Invention Grant
- Patent Title: Fabricating method and structure of a wafer level module
- Patent Title (中): 晶圆级模块的制造方法和结构
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Application No.: US12646094Application Date: 2009-12-23
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Publication No.: US08193599B2Publication Date: 2012-06-05
- Inventor: Hsin-Chang Hsiung , Chih-Wei Tan , Po-Lin Su
- Applicant: Hsin-Chang Hsiung , Chih-Wei Tan , Po-Lin Su
- Applicant Address: TW Tainan
- Assignee: Himax Semiconductor, Inc.
- Current Assignee: Himax Semiconductor, Inc.
- Current Assignee Address: TW Tainan
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Main IPC: H01L31/0203
- IPC: H01L31/0203

Abstract:
A fabricating method includes adhering an exposed surface of a first solid adhesive film to a first substrate. The second surface of the first solid adhesive film is exposed and adhered to a second substrate. A third substrate is adhered to a second substrate via a patterned second solid adhesive film, and a diaphragm layer is adhered to the third substrate via a patterned third solid adhesive film. A fourth solid adhesive film with a removable release film is adhered to the first substrate covered, followed by slicing to form wafer level lens modules.
Public/Granted literature
- US20110049547A1 FABRICATING METHOD AND STRUCTURE OF A WAFER LEVEL MODULE Public/Granted day:2011-03-03
Information query
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