Invention Grant
US08193602B2 Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
有权
具有控制栅极的肖特基二极管用于优化导通状态电阻，反向泄漏和反向击穿
- Patent Title: Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
- Patent Title (中): 具有控制栅极的肖特基二极管用于优化导通状态电阻，反向泄漏和反向击穿
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Application No.: US12763287Application Date: 2010-04-20
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Publication No.: US08193602B2Publication Date: 2012-06-05
- Inventor: Zia Alan Shafi , Jeffrey A. Babcock
- Applicant: Zia Alan Shafi , Jeffrey A. Babcock
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A Schottky diode optimizes the on state resistance, the reverse leakage current, and the reverse breakdown voltage of the Schottky diode by forming an insulated control gate over a region that lies between the metal-silicon junction of the Schottky diode and the n+ cathode contact of the Schottky diode.
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Information query
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