Semiconductor structure and method of forming the semiconductor structure that provides two individual resistors or a capacitor

Invention Grant

US08193603B2 Semiconductor structure and method of forming the semiconductor structure that provides two individual resistors or a capacitor 有权

Title translation: 形成提供两个单独电阻器或电容器的半导体结构的半导体结构和方法

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Patent Title: Semiconductor structure and method of forming the semiconductor structure that provides two individual resistors or a capacitor
Patent Title (中): 形成提供两个单独电阻器或电容器的半导体结构的半导体结构和方法
Application No.: US12789539

Application Date: 2010-05-28
Publication No.: US08193603B2

Publication Date: 2012-06-05
Inventor: Jeffrey Klatt
Applicant: Jeffrey Klatt
Applicant Address: US TX Dallas
Assignee: Texas Instruments Incorporated
Current Assignee: Texas Instruments Incorporated
Current Assignee Address: US TX Dallas
Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
Main IPC: H01L29/06
IPC: H01L29/06

Semiconductor structure and method of forming the semiconductor structure that provides two individual resistors or a capacitor

Abstract:

A semiconductor structure is formed in the metal interconnect structure of an integrated circuit in a method that provides either two individual resistors that are vertically isolated from each other, or a metal-insulator-metal (MIM) capacitor. As a result, both semiconductor resistors and MIM capacitors can be formed in the same process flow.

Abstract(Chinese):

在提供彼此垂直隔离的两个独立电阻器或金属 - 绝缘体 - 金属（MIM）电容器）的方法中，在集成电路的金属互连结构中形成半导体结构。结果，半导体电阻和MIM电容器可以以相同的工艺流程形成。

Public/Granted literature

US20110291225A1 Semiconducture Structure and Method of Forming the Semiconductor Structure that Provides Two Individual Resistors or a Capacitor Public/Granted day:2011-12-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的