Invention Grant
US08193607B2 Memory cell having GeN-containing material and variable resistance material embedded within insulating material
有权
具有含GeN的材料和可变电阻材料嵌入绝缘材料的存储单元
- Patent Title: Memory cell having GeN-containing material and variable resistance material embedded within insulating material
- Patent Title (中): 具有含GeN的材料和可变电阻材料嵌入绝缘材料的存储单元
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Application No.: US12844541Application Date: 2010-07-27
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Publication No.: US08193607B2Publication Date: 2012-06-05
- Inventor: John Smythe
- Applicant: John Smythe
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/8239
- IPC: H01L21/8239 ; H01L45/00
Abstract:
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the insulating material to expose a surface of the first electrode, forming a heater material within the via using gas cluster ion beams, forming a variable resistance material within the via, and forming a second electrode such that the heater material and variable resistance material are provided between the first and second electrodes.
Public/Granted literature
- US20100288994A1 METHOD OF FORMING MEMORY CELL USING GAS CLUSTER ION BEAMS Public/Granted day:2010-11-18
Information query
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