Invention Grant
- Patent Title: Semiconductor device, moisture-resistant frame, groove and method of producing semiconductor device
- Patent Title (中): 半导体装置，防潮框架，槽及半导体装置的制造方法
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Application No.: US12053903Application Date: 2008-03-24
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Publication No.: US08193614B2Publication Date: 2012-06-05
- Inventor: Tomoyuki Yamada , Fumio Ushida , Shigetoshi Takeda , Tomoharu Awaya , Koji Banno , Takayoshi Minami
- Applicant: Tomoyuki Yamada , Fumio Ushida , Shigetoshi Takeda , Tomoharu Awaya , Koji Banno , Takayoshi Minami
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-074424 20070322; JP2007-338951 20071228
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.
Public/Granted literature
- US20080230874A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2008-09-25
Information query
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